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Other articles related with "high electron mobility transistors"：
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40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (4): 40502-
[Abstract]
(537)
[HTML 1 KB]
[PDF 3285 KB]
(121)
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117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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Chin. Phys. B
2016 Vol.25 (11): 117305-117305
[Abstract]
(865)
[HTML 1 KB]
[PDF 1879 KB]
(432)
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67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
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Chin. Phys. B
2015 Vol.24 (6): 67301-067301
[Abstract]
(815)
[HTML 1 KB]
[PDF 473 KB]
(2233)
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128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
(588)
[HTML 1 KB]
[PDF 1012 KB]
(489)
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57304 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (5): 57304-057304
[Abstract]
(609)
[HTML 1 KB]
[PDF 610 KB]
(1059)
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77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
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Chin. Phys. B
2012 Vol.21 (7): 77304-077304
[Abstract]
(1698)
[HTML 1 KB]
[PDF 288 KB]
(1195)
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1371)
[HTML 1 KB]
[PDF 562 KB]
(1474)
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67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
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Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
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Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
(1521)
[HTML 1 KB]
[PDF 450 KB]
(1973)
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
(1629)
[HTML 1 KB]
[PDF 838 KB]
(1054)
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47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (4): 47301-047301
[Abstract]
(1531)
[HTML 1 KB]
[PDF 409 KB]
(1459)
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
(1633)
[HTML 1 KB]
[PDF 1865 KB]
(1038)
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1119 |
Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国) |
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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy |
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Chin. Phys. B
2008 Vol.17 (3): 1119-1123
[Abstract]
(1491)
[HTML 1 KB]
[PDF 380 KB]
(761)
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